This normally-off bidirectional GaN power transistor is rated for 40 V operation and supports bidirectional blocking for load-switch applications. It is housed in a 1.7 x 1.7 mm WLCSP package identified by Infineon as SG-UFWLB-16, enabling high power density designs. The device is specified for up to 35 A drain current at 25°C, with 6 mΩ typical on-state resistance and 5.3 nC gate charge. It is listed as active and preferred, supplied in tape and reel packaging of 4000 pieces, and marked RoHS compliant, halogen free, and lead-free.
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| Family | CoolGaN™ BDS 40 V G3 |
| Device type | Normally-off bidirectional power transistor |
| Drain current max (@25°C) | 35A |
| Maximum drain voltage | 40V |
| Gate charge | 5.3nC |
| On-state resistance typ | 6mΩ |
| Package | SG-UFWLB-16 |
| Package dimensions | 1.7 x 1.7mm |
| Planned availability | 2035 |
| Qualification | Standard |
| Packing type | TAPE & REEL |
| Moisture sensitivity level | 1 |
| RoHS Compliant | Yes |
| Halogen Free | Yes |
| Lead-free | Yes |
