This enhancement-mode 650 V GaN power transistor is designed for high-frequency power conversion and low switching losses. It belongs to the CoolGaN™ G5 family and is housed in a bottom-side cooled ThinPAK 8x8 package for slim, thermally efficient designs. The device is rated for 22 A continuous drain current at 25°C, 60 A pulsed drain current at 25°C, 55 mΩ typical RDS(on), and 4.7 nC gate charge. It supports ultrafast switching, reverse conduction capability, and zero reverse-recovery charge. The part is JEDEC qualified and listed as RoHS compliant, lead-free, and halogen free.
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| Technology | GaN HEMT |
| Product family | CoolGaN™ Transistor 650 V G5 |
| Drain-source voltage | 650V |
| Continuous drain current at 25°C | 22A |
| Pulsed drain current at 25°C | 60A |
| Gate charge | 4.7nC |
| RDS(on) typ | 55mΩ |
| Package | ThinPAK 8x8 |
| Qualification | Industrial |
| Planned availability through | 2035 |
| ESD robustness HBM | 2kV |
| ESD robustness CDM | 1kV |
| Reverse-recovery charge | None |
| Reverse conduction | Capable |
| RoHS | Compliant |
| Lead-free | Yes |
| Halogen Free | Yes |
