This gallium nitride power transistor is rated for 650 V and is housed in a ThinPAK 8x8 surface-mount package with bottom-side cooling. It offers a typical RDS(on) of 80 mΩ, a maximum continuous drain current of 18 A at 25°C, and a pulsed drain current of 42 A at 25°C. The device has a typical gate charge of 3.3 nC and is specified for industrial qualification. It supports ultrafast switching, reverse conduction capability, and high ESD robustness of 2 kV HBM and 1 kV CDM. The orderable device is lead-free, halogen-free, and RoHS compliant, with planned availability through at least 2035.
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| Drain-to-source voltage | 650V |
| On-resistance | 80 typmΩ |
| Gate charge | 3.3nC |
| Continuous drain current at 25°C | 18 maxA |
| Pulsed drain current at 25°C | 42 maxA |
| Package | ThinPAK 8x8 |
| Mounting | SMT |
| Qualification | Industrial |
| Generation | G5 |
| Planned availability | Through at least 2035 |
| ESD HBM robustness | 2kV |
| ESD CDM robustness | 1kV |
| Cooling | Bottom-side cooled |
| Reverse conduction | Capable |
| RoHS | Compliant |
| Lead Free | Yes |
| Halogen Free | Yes |
