This enhancement-mode GaN HEMT is rated for 650 V drain-source voltage and 14 A continuous drain current at 25°C case temperature. It provides 110 mΩ typical and 140 mΩ maximum on-state resistance, 2.4 nC typical gate charge, and 0 nC reverse-recovery charge for fast-switching power conversion. The device is housed in a bottom-cooled PG-LSON-8 surface-mount package and supports operation from -55°C to 150°C junction temperature. It is qualified for industrial applications, is RoHS compliant and halogen free, and is planned to be available until at least 2035.

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Power51W

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Technical Specifications

General

Technology	GaN HEMT
Drain-Source Voltage	650V
Drain-Source Transient Voltage	900V
Continuous Drain Current	14A
Pulsed Drain Current	30A
On-State Resistance Typ	110mΩ
On-State Resistance Max	140mΩ
Gate Charge Typ	2.4nC
Output Charge Typ	18nC
Power Dissipation	51W
Operating Junction Temperature Min	-55°C
Operating Junction Temperature Max	150°C
Thermal Resistance Junction-Case	2.5°C/W
Input Capacitance Typ	170pF
Output Capacitance Typ	29pF
Reverse Recovery Charge	0nC
dv/dt Max	200V/ns
Qualification	Industrial

Compliance

RoHS	Compliant
Halogen Free	Yes

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