This enhancement-mode gallium nitride power transistor is rated for 650 V and 12 A continuous drain current, with 23 A pulsed current capability at 25°C. It uses CoolGaN G5 technology and is offered in a DFN 8x8 package with PG-LSON-8 ordering-package designation for high-frequency power conversion. Typical on-state resistance is 140 mΩ, typical gate charge is 1.8 nC, and reverse-recovery charge is 0 nC. The device is qualified for industrial applications, is RoHS compliant and halogen free, and is planned to be available until at least 2035.
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| Transistor Type | Enhancement-mode GaN transistor |
| Drain-Source Voltage Max | 650V |
| Drain-Source Transient Voltage | 900V |
| Continuous Drain Current | 12A |
| Pulsed Drain Current | 23A |
| Power Dissipation | 42W |
| On-Resistance Typ | 140mΩ |
| On-Resistance Max | 170mΩ |
| Gate Charge Typ | 1.8nC |
| Output Charge | 14nC |
| Reverse Recovery Charge | 0nC |
| Gate Threshold Voltage | 0.9 to 1.6V |
| Input Capacitance | 155pF |
| Output Capacitance | 22pF |
| Reverse Transfer Capacitance | 0.31pF |
| Operating Junction Temperature | -55 to 150°C |
| Thermal Resistance Junction-Case | 3.0°C/W |
| RoHS | Compliant |
| Halogen Free | Yes |
