This 650 V e-mode GaN power transistor belongs to the CoolGaN™ Transistor 650 V G5 family and is housed in a top-side cooled TOLT package. It supports 67 A continuous drain current and 120 A pulsed drain current at 25°C, with 25 mΩ typical and 30 mΩ maximum RDS(on) and 11 nC gate charge. The device offers ultrafast switching, no reverse-recovery charge, reverse-conduction capability, and low dynamic RDS(on) for high-frequency industrial power conversion. It is industrial-qualified, rated for 2 kV HBM and 1 kV CDM ESD robustness, and is listed as RoHS compliant and halogen free.
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| Technology mode | e-mode |
| Drain-source voltage max | 650V |
| Drain current max @ 25°C | 67A |
| Pulsed drain current max @ 25°C | 120A |
| RDS(on) typ | 25mOhm |
| RDS(on) max | 30mOhm |
| Total gate charge | 11nC |
| Package | TOLT |
| Mounting | SMT |
| Qualification | Industrial |
| Generation | G5 |
| Planned availability until at least | 2035 |
| Reverse-recovery charge | none |
| Reverse conduction capability | yes |
| Top-side cooled package | yes |
| ESD robustness HBM | 2kV |
| ESD robustness CDM | 1kV |
| RoHS Compliant | Yes |
| Halogen Free | Yes |
| Lead-free | No |
