This enhancement-mode GaN power transistor belongs to the CoolGaN™ Transistor 650 V G5 family. It is rated for 650 V drain-source voltage and provides 35 mΩ typical and 42 mΩ maximum RDS(on), 47 A continuous drain current at 25°C, 97 A pulsed current, and 7.7 nC gate charge. The device supports ultrafast switching, reverse conduction, and no reverse-recovery charge for high-frequency power conversion. It is housed in a top-side cooled TOLT package and is qualified for industrial applications. The part is RoHS compliant and halogen free.
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| Transistor Type | Enhancement-mode GaN power transistor |
| Drain-Source Voltage | 650V |
| RDS(on) Typical | 35mΩ |
| RDS(on) Maximum | 42mΩ |
| Continuous Drain Current @25°C | 47A |
| Pulsed Drain Current @25°C | 97A |
| Total Gate Charge | 7.7nC |
| Package | TOLT |
| Cooling | Top-side cooled |
| Reverse Conduction | Capable |
| Reverse-Recovery Charge | No reverse-recovery charge |
| ESD HBM Robustness | 2kV |
| ESD CDM Robustness | 1kV |
| Qualification | Industrial |
| JEDEC Qualification | JESD47, JESD22 |
| Planned Availability Until At Least | 2035 |
| RoHS | Compliant |
| Halogen Free | Yes |
