This device is a 650 V normally-off bidirectional e-mode GaN power transistor for high power density switching designs. It uses a common-drain configuration with bidirectional blocking capability and is offered in Infineon package PG-HDSOP-16-9, described on the product page as a TOLT package. The device features low gate charge, low output charge, and integrated substrate voltage control for simplified bidirectional power topologies. Rated pulse current is 73.6 A at 25°C and typical on-resistance is 55 mΩ. The part is industrial qualified, RoHS compliant, halogen free, and currently planned to be available until at least 2035.
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| Drain-source voltage | 650V |
| Transistor mode | Normally-off e-mode |
| Configuration | Common-drain |
| Blocking capability | Bidirectional |
| On-resistance RDS(on) | 55mΩ |
| Pulse current ISS puls | 73.6A |
| Pulse current test condition | @25°C |
| Gate charge | Low |
| Output charge | Low |
| Substrate voltage control | Integrated |
| Package | PG-HDSOP-16-9 |
| Mounting style | SMD |
| Qualification | Industrial |
| RoHS status | Compliant |
| Halogen free | Yes |
| Planned availability | Until at least 2035 |
| RoHS | Compliant |
| Halogen Free | Yes |
These are design resources that include the Infineon IGLT65R055B2
User guide for the DEMO_AC_ZVS_HVBDS board, evaluating the CoolGaN 650 V G5 bidirectional switch (IGLT65R055B2) under AC zero-voltage switching (ZVS) conditions.
