The IGLT65R055B2 is a 650 V GaN-on-Silicon bi-directional switch utilizing Infineon's CoolGaN™ technology. It features a dual-gate structure for independent bi-directional functionality, effectively replacing back-to-back uni-directional FETs. It is based on a Gate Injection Transistor (GIT) structure for high ruggedness and is optimized for soft switching operations, offering superior efficiency and power density in high-frequency applications.
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Technical Specifications
Infineon IGLT65R055B2AUMA1 technical specifications.
General
| Drain-Source Voltage (VDS) | 650V |
| Static Drain-Source On-Resistance (RSS(on)) | 55mΩ |
| Transient Surge Voltage (VSS) | 850V |
| ESD (HBM) | 2kV |
| Continuous Drain Current (Id) | 30A |
| Gate Threshold Voltage (VGS(th)) | 1.2V |
Compliance
| RoHS | Compliant |
| Halogen-free | Yes |
Datasheet
Infineon IGLT65R055B2AUMA1 Datasheet
Download the complete datasheet for Infineon IGLT65R055B2AUMA1 to view detailed technical specifications.
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