This 650 V enhancement-mode GaN HEMT is designed for high-frequency industrial power conversion and is housed in a TOLT package. It provides 55 mΩ typical and 66 mΩ maximum on-resistance, 31 A maximum continuous drain current at 25°C, and 60 A pulsed drain current. The device has 4.7 nC gate charge, supports reverse conduction, and is specified with ultrafast switching and no reverse-recovery charge. It is qualified for industrial use, is RoHS compliant and halogen free, and is planned to be available until at least 2035.
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| Drain-Source Voltage | 650V |
| Continuous Drain Current @25°C Max | 31A |
| Pulsed Drain Current @25°C Max | 60A |
| Gate Charge | 4.7nC |
| RDS(on) Typ | 55mΩ |
| RDS(on) Max | 66mΩ |
| Package | TOLT |
| Qualification | Industrial |
| Planned Available Until At Least | 2035 |
| Moisture Sensitivity Level | 1 |
| Packing Type | TAPE & REEL |
| Lead-Free | No |
| RoHS | Compliant |
| Halogen Free | Yes |
| Lead-free | No |
