This 650 V normally-off bidirectional e-mode power transistor is built on the CoolGaN™ BDS 650 V G5 platform. It uses a common-drain architecture with bidirectional blocking capability, low gate charge, and low output charge, and it integrates substrate voltage control. The device is qualified for industrial use, offers 110 mΩ RDS(on), and supports 36 A pulsed current at 25°C. It is supplied in Infineon's PG-HDSOP-16-9 package for compact high-power-density power conversion designs.
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Infineon IGLT65R110B2 technical specifications.
| Voltage Rating | 650V |
| Transistor Type | Bidirectional e-mode GaN power transistor |
| Configuration | Common-drain |
| Blocking Capability | Bidirectional |
| Series | CoolGaN™ BDS 650 V G5 |
| Pulsed Current | 36A |
| On-Resistance RDS(on) | 110mΩ |
| Package | PG-HDSOP-16 |
| Package Name | PG-HDSOP-16-9 |
| Qualification | Industrial |
| Planned Availability | 2035 |
| Gate Charge | Low |
| Output Charge | Low |
| Substrate Voltage Control | Integrated |
| RoHS | Compliant |
| Halogen Free | Yes |
No datasheet is available for this part.
