650 V enhancement-mode GaN power transistor in a top-side-cooled DSO package. It provides 35 mΩ typical RDS(on), 44 A continuous drain current at 25 °C, and 97 A pulsed drain current capability. The device has 7.7 nC gate charge, supports reverse conduction with no reverse-recovery charge, and is intended for high-frequency power conversion. It is qualified for industrial use and is RoHS compliant and halogen free.
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| Drain-source voltage | 650V |
| On-resistance | 35 typmOhm |
| On-resistance | 42 maxmOhm |
| Continuous drain current | 44 @25°CA |
| Pulsed drain current | 97 @25°CA |
| Total gate charge | 7.7nC |
| ESD HBM | 2kV |
| ESD CDM | 1kV |
| Package | PG-DSO-20-90 |
| Lead count | 20 |
| Lead pitch | 1.27mm |
| Body length | 15.9mm |
| Body width | 11.0mm |
| Body thickness | 3.25mm |
| Moisture sensitivity level | 3 |
| Qualification | Industrial |
| Planned availability until | 2035 |
| RoHS | Compliant |
| Halogen Free | Yes |
