This enhancement-mode 650 V GaN power transistor is designed for high-frequency power conversion and industrial power control. It features 55 mΩ typical and 66 mΩ maximum on-resistance, 28 A continuous drain current at 25°C, 60 A pulsed drain current, and 4.7 nC gate charge. The device is housed in a top-side cooled DSO package and supports reverse conduction with no reverse-recovery charge. It is qualified for industrial use and is planned to be available until at least 2035. It is RoHS compliant and halogen free.
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| Technology | GaN power transistor |
| Series | CoolGaN™ Transistor 650 V G5 |
| Drain-to-Source Voltage | 650V |
| Continuous Drain Current | 28A |
| Pulsed Drain Current | 60A |
| Gate Charge | 4.7nC |
| On-Resistance Typ | 55mΩ |
| On-Resistance Max | 66mΩ |
| Package | DSO TSC |
| Qualification | Industrial |
| Planned Availability Until | 2035 |
| Moisture Sensitivity Level | 3 |
| Standard Pack Quantity | 800pcs |
| Packaging | Tape & Reel |
| Body Length | 15.9mm |
| Body Width | 11.0mm |
| Body Thickness | 3.25mm |
| Lead Pitch | 1.27mm |
| RoHS | Compliant |
| Halogen Free | Yes |
