Silicon carbide trench MOSFET provides 1700 V drain-source voltage capability and 1000 mΩ typical on-resistance in a 7-pin TO-263 SMD package. The device is optimized for flyback topologies in auxiliary power supplies connected to 600 V to 1000 V DC-link voltages. It supports 12 V and 0 V gate-source drive operation, has low switching losses, and offers controllable dV/dt behavior. The package provides enhanced creepage and clearance distances greater than 7 mm and is rated for -55 °C to 175 °C operation. The orderable device is lead-free, halogen-free, and RoHS compliant in tape-and-reel packaging.
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| Drain-source voltage | 1700V |
| Continuous drain current at 25°C | 5.2A |
| Drain-source on-resistance at Tj 25°C | 1000mΩ |
| Input capacitance | 275pF |
| Output capacitance | 7.2pF |
| Gate-drain charge | 1.6nC |
| Total gate charge | 5nC |
| Power dissipation at TA 25°C | 68W |
| Junction temperature maximum | 175°C |
| Operating temperature range | -55 to 175°C |
| Thermal resistance junction-to-ambient maximum | 62K/W |
| Thermal resistance junction-to-case maximum | 1.7K/W |
| Mounting | SMD |
| Package | TO-263-7 |
| Pin count | 7Pins |
| Polarity | N |
| Qualification | Industrial |
| Technology | CoolSiC™ G1 |
| Packing type | TAPE & REEL |
| Moisture sensitivity level | 1 |
| Lead-free | Yes |
| Halogen Free | Yes |
| RoHS Compliant | Yes |
These are design resources that include the Infineon IMBF170R1K0M1XTMA1
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