This industrial N-channel silicon carbide power MOSFET uses Infineon's CoolSiC™ Generation 2 technology and is rated for 750 V drain-to-source voltage. It provides a typical RDS(on) of 7 mΩ at 25°C, a maximum drain current of 222 A at 25°C, and a maximum junction-to-case thermal resistance of 0.19 K/W. The device is offered in a top-side cooled Q-DPAK SMT package with a driver source pin and improved .XT package interconnect. It operates across a junction temperature range of -55°C to 175°C and is supplied in tape-and-reel packaging. The part is qualified for industrial applications including static switching functions such as eFuses and solid-state circuit breakers.
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Infineon IMDQ75R007M2H technical specifications.
| Drain current max | 222A |
| Mounting | SMT |
| Operating temperature range | -55 to 175°C |
| Package | Q-DPAK |
| Polarity | N-channel |
| Qualification | Industrial |
| RDS(on) max at 25°C | 9mΩ |
| RDS(on) typ at 25°C | 7mΩ |
| Thermal resistance junction-to-case max | 0.19K/W |
| Technology | CoolSiC™ G2 |
| Drain-source voltage max | 750V |
| Infineon package | PG-HDSOP-22 |
| Packing type | Tape & Reel |
| Moisture sensitivity level | 1 |
| OPN | IMDQ75R007M2HXTMA1 |
| Lead-free | Yes |
| Halogen Free | Yes |
| RoHS Compliant | Yes |
No datasheet is available for this part.
