This device is an industrial N-channel silicon carbide MOSFET built on Infineon's CoolSiC™ G2 technology. It is rated for 750 V blocking voltage, 103 A drain current, and 16 mΩ RDS(on), and it is offered in a Q-DPAK top-side cooled surface-mount package. The recommended orderable part is IMDQ75R016M2HXTMA1 in PG-HDSOP-22 / Q-DPAK packaging with tape-and-reel delivery and a standard packing size of 750. The product is listed as active and preferred, lead-free, halogen free, and RoHS compliant.
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Infineon IMDQ75R016M2H technical specifications.
| Transistor Type | N-channel SiC MOSFET |
| Technology | CoolSiC™ G2 |
| Drain-Source Voltage | 750V |
| Drain Current | 103A |
| RDS(on) | 16mΩ |
| Package | Q-DPAK |
| Infineon Package | PG-HDSOP-22 |
| Cooling | Top-side cooled |
| Mounting | Surface mount |
| Qualification | Industrial |
| Packing Type | Tape & Reel |
| Moisture Sensitivity Level | 1 |
| Lead-free | Yes |
| Halogen Free | Yes |
| RoHS Compliant | Yes |
No datasheet is available for this part.
