This device is a 650 V N-channel silicon carbide power MOSFET in a TOLT top-side-cooling package. It provides a typical drain-source on-resistance of 26 mΩ, an 82 A continuous drain current at 25°C case temperature, and a 216 A pulsed drain current. The part is specified for junction temperatures from -55°C to 175°C and uses a recommended 18 V turn-on gate drive with 0 V turn-off. It is built on second-generation CoolSiC™ trench technology, supports unipolar driving, and is qualified for industrial applications. The orderable device is supplied in tape-and-reel packaging and is listed as lead-free, halogen-free, and RoHS compliant.
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| Drain-Source Voltage | 650V |
| Continuous Drain Current | 82A |
| Continuous Drain Current at Tc=100°C | 57A |
| Pulsed Drain Current | 216A |
| Drain-Source On-Resistance | 26 typmΩ |
| Drain-Source On-Resistance | 33 maxmΩ |
| Total Gate Charge | 42 typnC |
| Output Charge | 80 typnC |
| Input Capacitance | 1499 typpF |
| Output Capacitance | 111 typpF |
| Reverse Transfer Capacitance | 8.6 typpF |
| Gate Threshold Voltage | 4.5 typV |
| Turn-On Delay Time | 9.3 typns |
| Rise Time | 10.1 typns |
| Turn-Off Delay Time | 16 typns |
| Fall Time | 5.1 typns |
| Thermal Resistance Junction-to-Case | 0.41 max°C/W |
| Operating Junction Temperature | -55 to 175°C |
| RoHS Compliant | Yes |
| Halogen Free | Yes |
| Lead-free | Yes |
