This N-channel silicon carbide MOSFET uses Infineon's CoolSiC generation 2 technology and is rated for 400 V drain-source voltage. It provides 45.2 mΩ typical drain-source on-resistance at 25 °C, 40 A continuous drain current at 25 °C, and 21 nC typical total gate charge. The device is housed in a PG-TO247-3-40 through-hole package and supports a recommended 0 V to 18 V gate drive range. It is qualified for industrial applications and operates with junction temperatures up to 175 °C.
Infineon IMW40R045M2H technical specifications.
| Drain-Source Voltage | 400V |
| Continuous Drain Current | 40A |
| Continuous Drain Current at 100°C | 28A |
| Pulsed Drain Current | 120A |
| Drain-Source On-Resistance | 45.2 typmΩ |
| Drain-Source On-Resistance Max | 56.2mΩ |
| Gate Threshold Voltage | 4.5 typV |
| Input Capacitance | 710 typpF |
| Output Capacitance | 100 typpF |
| Reverse Transfer Capacitance | 9 typpF |
| Total Gate Charge | 21 typnC |
| Output Charge | 34 typnC |
| Output Energy | 2.4 typµJ |
| Thermal Resistance Junction-to-Case | 1.15 max°C/W |
| Operating Junction Temperature Max | 175°C |
| Storage Temperature Range | -55 to 150°C |
| Recommended Turn-On Voltage | 18V |
| Recommended Turn-Off Voltage | 0V |
| Package | PG-TO247-3-40 |
| Mounting | Through Hole |
| RoHS | Compliant |
| Halogen Free | Yes |
| Lead Free | Yes |
No datasheet is available for this part.
