This N-channel silicon carbide MOSFET is built on Infineon CoolSiC™ Generation 2 technology and is rated for 400 V operation. It offers 11 mΩ typical RDS(on) at 25°C with a maximum continuous drain current of 112 A. The device is supplied in a TO247 4-pin asymmetric-lead through-hole package and supports operation from -55°C to 175°C. It is qualified for industrial use, supports unipolar driving with 0 V turn-off, and features a fast body diode with low reverse recovery charge. The device is 100% avalanche tested and is intended for high-efficiency hard- and soft-switching power conversion systems.
Infineon IMZA40R011M2H technical specifications.
| Drain-Source Voltage | 400V |
| Blocking Voltage | 440V |
| Continuous Drain Current | 112A |
| On-Resistance RDS(on) | 11 typ, 14 max @ Tj=25°CmΩ |
| Gate Threshold Voltage | 4.5V |
| Operating Temperature | -55 to 175°C |
| Mounting | THT |
| Package | TO247 4-pin |
| Polarity | N-channel |
| Qualification | Industrial |
| Technology | CoolSiC™ G2 |
| Functional Packing | Tube |
| Standard Pack Quantity | 240pcs |
| Body Length | 21.0mm |
| Body Width | 15.8mm |
| Body Thickness | 5.0mm |
| Lead Pitch | 2.54mm |
| Weight | 6.1g |
| RoHS | Compliant |
| Lead Free | Yes |
| Halogen Free | Yes |
No datasheet is available for this part.
