This N-channel silicon carbide MOSFET is rated for 650 V drain-source voltage and 103 A continuous drain current at 25°C. It uses Infineon's CoolSiC™ G2 technology and is offered in a TO247 4-pin package with asymmetric leads for through-hole mounting. The device provides a typical RDS(on) of 10 mΩ at 25°C, with a maximum of 13 mΩ, and a maximum junction-to-case thermal resistance of 0.44 K/W. Its operating junction temperature range is -55°C to 175°C, and the orderable part is listed as lead-free, halogen-free, and RoHS compliant.
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Infineon IMZA65R010M2H technical specifications.
| Transistor Type | N-channel SiC MOSFET |
| Technology | CoolSiC™ G2 |
| Drain-Source Voltage | 650V |
| Continuous Drain Current (@25°C) | 103A |
| RDS(on) Typical (@25°C) | 10mΩ |
| RDS(on) Maximum (@25°C) | 13mΩ |
| Thermal Resistance Junction-to-Case Max | 0.44K/W |
| Operating Temperature Range | -55 to 175°C |
| Mounting | THT |
| Package | TO247 4-pin (asymmetric leads) |
| Qualification | Industrial |
| Polarity | N |
| Lead-free | Yes |
| Halogen Free | Yes |
| RoHS Compliant | Yes |
No datasheet is available for this part.
