This device is an 80 V OptiMOS™ 5 N-channel power MOSFET in an electrically isolated TO-220 FullPAK package. It is specified for 64 A continuous drain current, 256 A pulsed drain current, 5.2 mΩ maximum RDS(on) at 10 V, and 42 nC typical gate charge at 10 V. The MOSFET supports up to 38 W power dissipation and operates over a -55 °C to 175 °C temperature range. It is intended for improved system efficiency and power density in synchronous rectification and power supply applications such as TV power supplies, adapters, desktops, and gaming systems.
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| Drain-Source Voltage | 80V |
| Continuous Drain Current | 64A |
| Pulsed Drain Current | 256A |
| On-Resistance RDS(on) max at 10 V | 5.2mΩ |
| Total Gate Charge Qg typ at 10 V | 42nC |
| Gate Threshold Voltage Range | 2.2 to 3.8V |
| Power Dissipation Ptot max | 38W |
| Operating Temperature Range | -55 to 175°C |
| Polarity | N |
| Technology | OptiMOS™ 5 |
| Package | TO-220 FullPAK |
| RoHS Compliant | Yes |
| Lead-free | Yes |
| Halogen Free | Yes |
Download the complete datasheet for Infineon IPA052N08NM5S to view detailed technical specifications.
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