The IPA057N08N3G is a 60A N-Channel MOSFET from Infineon with a maximum drain to source voltage of 80V and a maximum gate to source voltage of 20V. It features a maximum power dissipation of 39W and is packaged in a TO-220-3 case. The device is halogen free and RoHS compliant, with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C.
PackageTO-220-3
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Technical Specifications
Infineon IPA057N08N3G technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 80V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 16.15mm |
| Input Capacitance | 4.75nF |
| Length | 10.65mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 39W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Rds On Max | 5.7mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 17ns |
| Width | 4.85mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPA057N08N3G Datasheet
Download the complete datasheet for Infineon IPA057N08N3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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