This N-channel power MOSFET uses CoolMOS C7 superjunction technology and is housed in a TO-220 FP full-pack package. It is rated for 9 A continuous drain current at 25 °C case temperature, 45 A pulsed drain current, and 29 W power dissipation. The device has a maximum drain-source on-resistance of 180 mΩ, typical total gate charge of 24 nC, and typical input capacitance of 1080 pF. Operating junction and storage temperature range from -55 °C to 150 °C, and the package insulation withstand voltage is 2500 Vrms.
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| Drain-Source Breakdown Voltage | 600V |
| Continuous Drain Current | 9A |
| Continuous Drain Current at 100°C Case | 5A |
| Pulsed Drain Current | 45A |
| Power Dissipation | 29W |
| Gate-Source Voltage | -20 to 20V |
| Gate-Source Voltage Dynamic | -30 to 30V |
| Drain-Source On-Resistance | 0.180 maxΩ |
| Gate Threshold Voltage | 3 to 4V |
| Input Capacitance | 1080 typpF |
| Output Capacitance | 18 typpF |
| Total Gate Charge | 24 typnC |
| Thermal Resistance Junction-Case | 4.28 max°C/W |
| Operating Junction Temperature | -55 to 150°C |
| Reverse Recovery Time | 280 typns |
| Reverse Recovery Charge | 2.6 typµC |
