This N-channel power MOSFET is rated for 950 V drain-source voltage and 14 A continuous drain current. It provides a maximum 450 mΩ RDS(on) at 10 V gate drive and a typical total gate charge of 35 nC. The device is housed in a 3-pin TO220 FullPAK through-hole package and operates across a junction temperature range of -55 °C to 150 °C. It is intended for low-power SMPS applications such as lighting, smart meters, mobile phone chargers, notebook adapters, auxiliary power supplies, and industrial SMPS. The device uses CoolMOS™ P7 technology with a protected gate and is listed as RoHS compliant.
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| Transistor Type | N-Channel Power MOSFET |
| Drain-Source Voltage | 950V |
| Continuous Drain Current (@25°C) | 14A |
| Continuous Drain Current (max) | 14A |
| Pulsed Drain Current | 43A |
| Drain-Source On-Resistance (max @10V) | 450mΩ |
| Total Gate Charge (typ @10V) | 35nC |
| Gate Threshold Voltage | 3V |
| Gate Threshold Voltage Range | 2.5 to 3.5V |
| Power Dissipation | 30W |
| Operating Temperature Range | -55 to 150°C |
| Mounting | THT |
| Package | TO220 FullPAK |
| Pin Count | 3 |
| Polarity | N |
| Special Features | Price-performance |
| RoHS | Compliant |
