The IPB017N06N3G is a 180A power MOSFET from Infineon, packaged in a TO-263-7 case. It has a maximum operating temperature range of -55°C to 175°C and a maximum power dissipation of 250W. The device features a gate to source voltage of 20V and a threshold voltage of 3V. It also has a maximum continuous drain current of 180A and a maximum Rds on of 1.7mR.
PackageTO-263-7
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Technical Specifications
Infineon IPB017N06N3G technical specifications.
General
| Package/Case | TO-263-7 |
| Continuous Drain Current (ID) | 180A |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.57mm |
| Input Capacitance | 23nF |
| Lead Free | Lead Free |
| Length | 10.31mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 1.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 79ns |
| Turn-On Delay Time | 41ns |
| Width | 9.45mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB017N06N3G Datasheet
Download the complete datasheet for Infineon IPB017N06N3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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