This 100 V N-channel power MOSFET is specified for hot-swap and e-fuse applications and uses Infineon's OptiMOS 5 Linear FET technology. It is housed in a PG-TO 263-3 D²PAK package and features a maximum drain-source on-resistance of 2.0 mΩ at 10 V gate drive. The device is avalanche tested, offers a wide safe operating area, and supports up to 120 A package-limited continuous drain current with 480 A pulsed drain current. It is rated for junction temperatures from -55 °C to 150 °C and is identified as Pb-free, RoHS compliant, and halogen-free.
Checking distributor stock and pricing after the page loads.
| Drain-Source Voltage | 100V |
| Drain-Source On-Resistance | 2.0 maxmΩ |
| Continuous Drain Current (Silicon Limited) | 289A |
| Continuous Drain Current (Package Limited) | 120A |
| Pulsed Drain Current | 480A |
| Single Pulse Avalanche Energy | 979mJ |
| Gate-Source Voltage | -20 to 20V |
| Power Dissipation | 313W |
| Operating Junction Temperature | -55 to 150°C |
| Thermal Resistance Junction-Case | 0.4 maxK/W |
| Gate Threshold Voltage | 2.5 to 4.1V |
| Input Capacitance | 650 typpF |
| Output Capacitance | 1900 typpF |
| Reverse Transfer Capacitance | 25 typpF |
| Turn-On Delay Time | 7 typns |
| Rise Time | 28 typns |
| Turn-Off Delay Time | 128 typns |
| Fall Time | 82 typns |
| Total Gate Charge | 195 typnC |
| Reverse Recovery Time | 62 typns |
| Reverse Recovery Charge | 113 typnC |
| Diode Forward Voltage | 1.2 maxV |
| RoHS | Compliant |
| Halogen Free | Yes |
| Pb-free | Yes |
