The IPB025N08N3G is a 120A 75V MOSFET from Infineon, packaged in a TO-263-3. It features a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. The device is RoHS compliant and lead free, and is suitable for use in high-power applications. The MOSFET has a maximum power dissipation of 300W and a threshold voltage of 2.8V.
PackageTO-263-3
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Technical Specifications
Infineon IPB025N08N3G technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 14.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 2.8V |
| Turn-Off Delay Time | 86ns |
| Turn-On Delay Time | 28ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB025N08N3G Datasheet
Download the complete datasheet for Infineon IPB025N08N3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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