This single N-channel power MOSFET is rated for 100 V and is housed in a D2PAK (TO-263) package. It delivers up to 162 A continuous drain current at 25°C, 648 A pulsed drain current, and 250 W maximum power dissipation. Maximum on-resistance is 2.65 mΩ at 10 V gate drive, with typical total gate charge of 103 nC and gate threshold voltage from 2.2 V to 3.8 V. The device operates from -55°C to 175°C, is supplied in tape-and-reel packaging, and is listed as RoHS compliant and halogen free.
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Infineon IPB026N10NF2S technical specifications.
| Drain-Source Voltage Max | 100V |
| Continuous Drain Current Max (@25°C) | 162A |
| Pulsed Drain Current Max | 648A |
| Operating Temperature Range | -55 to 175°C |
| Power Dissipation Max | 250W |
| Total Gate Charge Typ (@10V) | 103nC |
| Drain-Source On-Resistance Max (@10V) | 2.65mΩ |
| Gate Threshold Voltage Min | 2.2V |
| Gate Threshold Voltage Typ | 3V |
| Gate Threshold Voltage Max | 3.8V |
| Polarity | N |
| RoHS Compliant | Yes |
| Halogen Free | Yes |
| Lead-free | No |
No datasheet is available for this part.
