The IPB039N10N3G is a 100V power MOSFET from Infineon with a maximum operating temperature range of -55°C to 175°C. It features a continuous drain current of 160A and a maximum power dissipation of 214W. The device is packaged in a TO-263-7 case and is designed for surface mount applications. It has a threshold voltage of 2.7V and a maximum Rds on resistance of 3.9mR. The MOSFET has a fall time of 14ns and a turn-off delay time of 48ns.
PackageTO-263-7
MountingSurface Mount
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Technical Specifications
Infineon IPB039N10N3G technical specifications.
General
| Package/Case | TO-263-7 |
| Continuous Drain Current (ID) | 160A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.57mm |
| Input Capacitance | 8.41nF |
| Lead Free | Lead Free |
| Length | 10.31mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 214W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 3.9mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 2.7V |
| Turn-Off Delay Time | 48ns |
| Turn-On Delay Time | 27ns |
| Width | 9.45mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB039N10N3G Datasheet
Download the complete datasheet for Infineon IPB039N10N3G to view detailed technical specifications.
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