The IPB039N10N3GE818XT is a high-power N-channel MOSFET from Infineon, featuring a maximum operating temperature range of -55°C to 175°C. It has a continuous drain current rating of 80A and a drain to source voltage of 40V. The device's drain to source resistance is 3.9 milliohms, and it can handle a maximum power dissipation of 94W. The MOSFET is packaged in a D2PAK package, available in quantities of 1000 on tape and reel.
PackageD2PAK
PolarityN-CHANNEL
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Technical Specifications
Infineon IPB039N10N3GE818XT technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Resistance | 3.9mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 94W |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Series | IPB039N10 |
| Turn-Off Delay Time | 38ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB039N10N3GE818XT Datasheet
Download the complete datasheet for Infineon IPB039N10N3GE818XT to view detailed technical specifications.
No datasheet is available for this part.
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