This N-channel linear mode MOSFET is designed for telecom and battery management applications that need low on-resistance together with a wide safe operating area. It supports 150 V drain-source voltage, 120 A continuous drain current at 25°C, and 480 A pulsed drain current. The device is housed in a D2PAK (TO-263) surface-mount package with 3 pins and is rated for operation from -55°C to 150°C. Maximum RDS(on) at 10 V is 4.8 mΩ, total power dissipation is 313 W, and typical gate charge at 10 V is 84 nC with 56 nC gate-drain charge.
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Infineon IPB048N15N5LF technical specifications.
| Drain-source voltage | 150V |
| Continuous drain current at 25°C | 120A |
| Pulsed drain current | 480A |
| Mounting | SMD |
| Operating temperature range | -55 to 150°C |
| Package | D2PAK (TO-263) |
| Pin count | 3Pins |
| Polarity | N-channel |
| Total power dissipation max | 313W |
| Gate-drain charge | 56nC |
| Total gate charge at 10 V typ | 84nC |
| RDS(on) max at 10 V | 4.8mΩ |
| Thermal resistance junction-to-ambient max | 62K/W |
| Thermal resistance junction-to-case max | 0.4K/W |
| Thermal resistance | 0.25K/W |
| Special features | Wide SOA |
| Gate threshold voltage range | 3.3 to 4.9V |
| Gate threshold voltage | 4.1V |
| RoHS Compliant | Yes |
| Halogen Free | Yes |
| Lead-free | No |
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