The IPB049NE7N3G is a high-power MOSFET from Infineon, featuring a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 80A and a maximum power dissipation of 188W. The device is packaged in a TO-263-3 case and is available in a tape and reel packaging format. The IPB049NE7N3G is compliant with RoHS and Reach SVHC regulations.
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Infineon IPB049NE7N3G technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 80A |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.57mm |
| Input Capacitance | 13nF |
| Length | 10.31mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 188W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 2.9mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 14ns |
| Width | 9.45mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPB049NE7N3G to view detailed technical specifications.
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