The IPB067N08N3G is a 80V 80A power MOSFET from Infineon, packaged in a TO-263-3 case. It features a maximum power dissipation of 136W and operates over a temperature range of -55°C to 175°C. The device has a maximum on-resistance of 6.7mΩ and turn-on and turn-off delay times of 16ns and 31ns, respectively. It is halogen-free and RoHS compliant, making it suitable for a variety of applications.
PackageTO-263-3
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Technical Specifications
Infineon IPB067N08N3G technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3.84nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 136W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 6.7mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 16ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB067N08N3G Datasheet
Download the complete datasheet for Infineon IPB067N08N3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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