The IPB144N12N3G is a SIPMOS power MOSFET from Infineon, packaged in a TO-263-3 case. It can handle a continuous drain current of up to 56A and has a maximum power dissipation of 75W. The device operates over a temperature range of -55°C to 175°C and is compliant with RoHS and Reach SVHC regulations. The MOSFET has a maximum gate to source voltage of 20V and a maximum Rds on of 400mR, with fall times and delay times of 4ns and 16ns/24ns, respectively.
PackageTO-263-3
Quick Jump:
Technical Specifications
Infineon IPB144N12N3G technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 56A |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.572mm |
| Input Capacitance | 530pF |
| Lead Free | Lead Free |
| Length | 10.31mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 400mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 16ns |
| Width | 9.45mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB144N12N3G Datasheet
Download the complete datasheet for Infineon IPB144N12N3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
