The IPB17N25S3-100 is a power MOSFET from Infineon with a maximum drain to source voltage of 250V and a maximum gate to source voltage of 20V. It has a continuous drain current of 17A and a maximum power dissipation of 107W. The device is packaged in a TO-263-3 case and is available in tape and reel packaging. It operates over a temperature range of -55°C to 175°C and is compliant with RoHS regulations.
PackageTO-263-3
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Technical Specifications
Infineon IPB17N25S3-100 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 250V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Height | 4.4mm |
| Input Capacitance | 1.133nF |
| Length | 10mm |
| Max Dual Supply Voltage | 250V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 107W |
| Packaging | Tape and Reel |
| Rds On Max | 100mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 7.5ns |
| Turn-On Delay Time | 4.4ns |
| Width | 9.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB17N25S3-100 Datasheet
Download the complete datasheet for Infineon IPB17N25S3-100 to view detailed technical specifications.
No datasheet is available for this part.
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