This P-channel OptiMOS power MOSFET is rated for a maximum drain-source voltage of -100 V and is housed in a D2PAK (TO-263) surface-mount package. It supports continuous drain current up to -252 A, with maximum RDS(on) of 32 mΩ at -10 V and 37 mΩ at -4.5 V. The device offers typical total gate charge of -219 nC at -10 V and -110 nC at -4.5 V for fast switching operation. It is specified for operation from -55 °C to 175 °C and for maximum power dissipation of 300 W. The part is intended for battery management, load switch, and reverse-polarity protection applications, and the listed orderable part is RoHS compliant and halogen free.
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Infineon IPB320P10LM technical specifications.
| Transistor Polarity | P-channel |
| Drain-Source Voltage | -100V |
| Continuous Drain Current | -252A |
| Mounting Type | SMT |
| Operating Temperature Range | -55 to 175°C |
| Package | D2PAK (TO-263) |
| Pin Count | 3Pins |
| Power Dissipation | 300W |
| Total Gate Charge @ 10 V | -219nC |
| Total Gate Charge @ 4.5 V | -110nC |
| RDS(on) Max @ 10 V | 32mΩ |
| RDS(on) Max @ 4.5 V | 37mΩ |
| Gate Threshold Voltage Range | -1 to -2V |
| RoHS Compliant | Yes |
| Halogen Free | Yes |
| Lead-free | No |
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