This P-channel power MOSFET is rated for -100 V drain-source voltage and is housed in a D2PAK (TO-263) surface-mount package. It offers a maximum RDS(on) of 33 mΩ at 10 V, continuous drain current of -62 A, pulsed drain current of -248 A, and total power dissipation of 300 W. The device is intended for battery management, load switch, and reverse-polarity protection applications, and Infineon states that it supports fast switching and avalanche ruggedness. It operates across a junction temperature range of -55 °C to 175 °C and has a typical total gate charge of -189 nC.
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| Drain-source voltage | -100V |
| Continuous drain current | -62A |
| Pulsed drain current | -248A |
| On-resistance RDS(on) max | 33mΩ |
| Gate threshold voltage | -2.1 to -4V |
| Total gate charge | -189 typ @10VnC |
| Power dissipation | 300W |
| Operating temperature | -55 to 175°C |
| Mounting | SMT |
| Package | D2PAK (TO-263) |
| Pin count | 3Pins |
| Polarity | P-channel |
| Body length | 10.0mm |
| Body width | 9.25mm |
| Body thickness | 4.4mm |
| Lead pitch | 2.54mm |
| Weight | 1.5g |
| Moisture sensitivity level | 1 |
| RoHS | Compliant |
| Halogen Free | Yes |
