The IPB60R600C6 is a N-CHANNEL SIPMOS MOSFET from Infineon with a maximum operating temperature of -55°C to 150°C. It features a drain to source breakdown voltage of 650V and a continuous drain current of 7.3A. The device is packaged in a TO-263-3 package and is halogen free. It has a maximum power dissipation of 128W and a nominal Vgs of 3V. The IPB60R600C6 is RoHS compliant and suitable for high-power applications.
PackageTO-263-3
PolarityN-CHANNEL
Power63W
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Technical Specifications
Infineon IPB60R600C6 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 7.3A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.57mm |
| Input Capacitance | 1.49nF |
| Length | 10.31mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 128W |
| Nominal Vgs | 3V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 63W |
| Rds On Max | 200mR |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 12ns |
| Width | 9.45mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB60R600C6 Datasheet
Download the complete datasheet for Infineon IPB60R600C6 to view detailed technical specifications.
No datasheet is available for this part.