This automotive-qualified N-channel power MOSFET is rated for 650 V and supports up to 14 A continuous drain current at 25°C. It provides 190 mΩ maximum RDS(on) at 25°C, 28 nC maximum gate charge at 10 V, and 77 W maximum power dissipation. The device is built on CoolMOS™ CFD7A technology with low stored energy in COSS and low reverse recovery charge characteristics. It is supplied in a surface-mount D2PAK 3-pin package and operates across a junction temperature range of -40°C to 150°C. Typical applications include high-voltage DC-DC converters and on-board chargers.
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Infineon IPB65R190CFD7A technical specifications.
| Transistor type | N-channel power MOSFET |
| Technology | CoolMOS™ CFD7A |
| Drain-source voltage | 650V |
| Continuous drain current at 25°C | 14A |
| Maximum drain current | 14A |
| Pulsed drain current | 55A |
| On-resistance max at 25°C | 190mΩ |
| On-resistance typ at 25°C | 158mΩ |
| Gate charge max at 10 V | 28nC |
| Power dissipation max | 77W |
| Gate threshold voltage range | 3.5 to 4.5V |
| Gate threshold voltage typ | 4V |
| Operating temperature range | -40 to 150°C |
| Mounting | SMT |
| Package | D2PAK |
| Pin count | 3 |
| Qualification | Automotive |
| Special features | Highest cosmic radiation robustness |
| RoHS Compliant | Yes |
| Halogen Free | Yes |
| Lead-free | No |
No datasheet is available for this part.
