This device is a single N-channel power MOSFET rated for 650 V drain-to-source voltage and 17.5 A continuous drain current. It is offered in a TO-263-3 package and is listed with 151 W power dissipation. Archive and distributor metadata identify it as a discrete MOSFET from Infineon. RoHS-compliant orderable variants are listed under the IPB65R190CFDA family.
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Infineon IPB65R190CFDA technical specifications.
| Transistor Type | MOSFET |
| Polarity | N-Channel |
| Configuration | Single |
| Drain-Source Voltage | 650V |
| Continuous Drain Current | 17.5A |
| Power Dissipation | 151W |
| Package Type | TO-263-3 |
| Terminal Count | 3 |
| RoHS | Yes |
No datasheet is available for this part.
