This N-channel power MOSFET belongs to Infineon's 650 V CoolMOS CFDA family and is intended for switching applications. It is rated for 11.4 A drain current and is offered in a PG-TO263-3 D2PAK surface-mount package. The device is a silicon metal-oxide semiconductor field-effect transistor with a three-pin package and tab connection.
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Infineon IPB65R310CFDA technical specifications.
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage | 650V |
| Continuous Drain Current | 11.4A |
| Package | PG-TO263-3 |
| Package Style | D2PAK / TO-263AB |
| Mounting | Surface Mount |
| Pin Count | 3 |
| Power Dissipation | 104.2W |
| Technology | Silicon MOSFET |
| Application | Switching applications |
No datasheet is available for this part.
