The IPB80P04P4-09 is a P-channel MOSFET from Infineon with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of -80A and a drain to source breakdown voltage of -40V. The device features a drain to source resistance of 4.9mR and a power dissipation of 125W. It is packaged in a TO-263 case and is available on tape and reel.
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| Package/Case | TO-263 |
| Continuous Drain Current (ID) | -80A |
| Drain to Source Breakdown Voltage | -40V |
| Drain to Source Resistance | 4.9mR |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 125W |
| Turn-Off Delay Time | 73ns |
| RoHS | Compliant |
