This N-channel logic-level power MOSFET is rated for 30 V drain-source voltage and is offered in Infineon's PG-TO252-3 DPAK package. It specifies a maximum drain-source on-resistance of 2.05 mΩ at 10 V gate drive and supports up to 143 A continuous drain current at 25 °C case temperature. The device is rated for operation from -55 °C to 175 °C, is 100% avalanche tested, and is intended for low- to high-frequency power applications. It is RoHS compliant, halogen-free according to IEC 61249-2-21, and uses Pb-free lead plating.
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Infineon IPD020N03LF2S technical specifications.
| Drain-source voltage | 30V |
| Continuous drain current | 143A |
| Pulsed drain current | 572A |
| Drain-source on-state resistance max | 2.05mΩ |
| Drain-source on-state resistance max at VGS=4.5 V | 2.7mΩ |
| Gate threshold voltage typ | 1.85V |
| Gate-source voltage | ±20V |
| Power dissipation | 136W |
| Operating junction temperature max | 175°C |
| Thermal resistance junction-to-case | 1.1°C/W |
| Input capacitance typ | 4700pF |
| Output capacitance typ | 910pF |
| Reverse transfer capacitance typ | 235pF |
| Turn-on delay time typ | 20ns |
| Rise time typ | 24ns |
| Turn-off delay time typ | 25ns |
| Fall time typ | 11ns |
| Total gate charge typ (0 to 4.5 V) | 33nC |
| Output charge typ | 54nC |
| Reverse recovery time typ | 21ns |
| Reverse recovery charge typ | 71nC |
| Avalanche energy single pulse | 338mJ |
| RoHS | Compliant |
| Halogen Free | Yes |
| Pb-free Lead Plating | Yes |
No datasheet is available for this part.
