The IPD053N06N3GBTMA1 is a surface mount power MOSFET from Infineon with a maximum operating temperature range of -55°C to 175°C. It features a maximum power dissipation of 115W and a maximum drain to source voltage of 60V. The device has a continuous drain current rating of 90A and an on-resistance of 5.3mΩ. It is packaged in a TO-252-3 package and is RoHS compliant.
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Infineon IPD053N06N3GBTMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Voltage (Vdss) | 60V |
| Input Capacitance | 6.6nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 115W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 5.3mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| RoHS | Compliant |
No datasheet is available for this part.
