The IPD053N06N3GXT is a single N-channel MOSFET from Infineon with a maximum operating temperature range of -55°C to 175°C. It features a continuous drain current of 90A and a gate to source voltage of 20V. The device is packaged in a TO-252 package and is designed for surface mount applications. It can dissipate a maximum power of 115W.
PackageTO-252
MountingSurface Mount
Power115W
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Technical Specifications
Infineon IPD053N06N3GXT technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 90A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 115W |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD053N06N3GXT Datasheet
Download the complete datasheet for Infineon IPD053N06N3GXT to view detailed technical specifications.
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