The IPD079N06L3G is a 50A 20V MOSFET from Infineon, packaged in the TO-252-3 package. It has a maximum operating temperature range of -55°C to 175°C and a maximum power dissipation of 79W. The device has a low on-resistance of 7.9mR and fast switching times, with a fall time of 7ns and turn-off delay time of 37ns. The MOSFET is lead-free and RoHS compliant, making it suitable for use in a variety of applications.
Sign in to ask questions about the Infineon IPD079N06L3G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPD079N06L3G technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 50A |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.413mm |
| Input Capacitance | 4.9nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 79W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 7.9mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 15ns |
| Width | 6.223mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPD079N06L3G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
