The IPD105N03LGBTMA1 is a single-element N-Channel MOSFET from Infineon with a maximum operating temperature range of -55°C to 175°C. It features a continuous drain current of 35A and a power dissipation of 38W. The device is packaged in a TO-252 case and is designed for surface mount applications. The MOSFET has a gate to source voltage of 20V and turn-on and turn-off delay times of 3.7ns and 14ns, respectively.
PackageTO-252
MountingSurface Mount
Power38W
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Technical Specifications
Infineon IPD105N03LGBTMA1 technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 35A |
| Fall Time | 2.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 38W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 3.7ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Infineon IPD105N03LGBTMA1 Datasheet
Download the complete datasheet for Infineon IPD105N03LGBTMA1 to view detailed technical specifications.
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