This device is an N-channel normal-level power MOSFET in the PG-TO252-3 package. It is rated for 100 V drain-source voltage and 52 A continuous drain current at TC = 25 °C, with a maximum drain-source on-resistance of 13.0 mOhm at VGS = 10 V and 30 A. The datasheet lists 18.6 nC typical total gate charge, 1300 pF typical input capacitance, and 26 nC typical output charge. It is avalanche tested, uses Pb-free lead plating, is RoHS compliant, and is halogen-free according to IEC61249-2-21. The operating and storage junction temperature range extends from -55 °C to 175 °C.
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Infineon IPD130N10NF2S technical specifications.
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage | 100V |
| Continuous Drain Current | 52A |
| Drain-Source On-Resistance Max | 13.0mΩ |
| Drain-Source On-Resistance Max at 6 V | 16.8mΩ |
| Total Gate Charge Typ | 18.6nC |
| Output Charge Typ | 26nC |
| Input Capacitance Typ | 1300pF |
| Output Capacitance Typ | 210pF |
| Reverse Transfer Capacitance Typ | 10pF |
| Gate Threshold Voltage Typ | 3.0V |
| Gate-Source Voltage | ±20V |
| Pulsed Drain Current | 208A |
| Avalanche Energy Single Pulse | 31mJ |
| Power Dissipation | 71W |
| Operating Junction Temperature Max | 175°C |
| Thermal Resistance Junction-Case Max | 2.1°C/W |
| Package | PG-TO252-3 |
| RoHS | Compliant |
| Halogen Free | Yes |
