This N-channel power MOSFET is designed for 30 V applications in a DPAK (TO-252) package. It uses Infineon OptiMOS 3 technology and is specified for up to 30 A continuous drain current at 25 °C with 13.5 mΩ maximum on-resistance at 10 V gate drive. The device supports logic-level operation, with 20.5 mΩ maximum on-resistance at 4.5 V and typical total gate charge of 10 nC at 10 V. Operating temperature range is -55 °C to 175 °C, and thermal resistance is specified as 4.9 K/W. The package is halogen-free and RoHS compliant.
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Infineon IPD135N03L G technical specifications.
| Technology | OptiMOS 3 |
| Polarity | N-channel |
| Drain-Source Voltage | 30V |
| Continuous Drain Current (@25°C) | 30A |
| Pulsed Drain Current | 210A |
| Power Dissipation | 31W |
| On-Resistance Max (@10V) | 13.5mΩ |
| On-Resistance Max (@4.5V) | 20.5mΩ |
| Input Capacitance | 770pF |
| Output Capacitance | 350pF |
| Total Gate Charge Typ (@10V) | 10nC |
| Total Gate Charge Typ (@4.5V) | 4.8nC |
| Threshold Voltage Range | 1 to 2.2V |
| Thermal Resistance | 4.9K/W |
| Operating Temperature Range | -55 to 175°C |
| Special Features | Logic Level |
| RoHS Compliant | Yes |
| Halogen Free | Yes |
| Lead-free | No |
No datasheet is available for this part.
