
The IPD50N04S3-09 is a 40V, 50A MOSFET from Infineon, packaged in a TO-252-3. It features a maximum power dissipation of 63W and an on-resistance of 9mR. The device is halogen free and RoHS compliant, making it suitable for a variety of applications. The TO-252-3 package is designed for through-hole mounting and is available in tape and reel packaging.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPD50N04S3-09 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPD50N04S3-09 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 40V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.75nF |
| Max Dual Supply Voltage | 40V |
| Max Power Dissipation | 63W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPD50N04S3-09 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.